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    Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

    Thomas, Robert J. (Robert James), 1967-
    Rockwell, Benjamin A.
    Chandrasekhar, Holalkere R.
    Chandrasekhar, Meera
    Ramdas, A. K.
    Kobayashi, M.
    Gunshor, R. L.
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    [PDF] TemperatureDependenceStrainZnSe.pdf (548.6Kb)
    Date
    1995
    Format
    Article
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    Abstract
    A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy‐ and light‐hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.
    URI
    http://hdl.handle.net/10355/8161
    Citation
    J. Appl. Phys. 78, 6569 (1995)
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    • Physics and Astronomy publications (MU)

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