Raman and modulated-reflectivity spectra of a strained pseudomorphic ZnTe epilayer on InAs under pressure

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Raman and modulated-reflectivity spectra of a strained pseudomorphic ZnTe epilayer on InAs under pressure

Please use this identifier to cite or link to this item: http://hdl.handle.net/10355/8162

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Title: Raman and modulated-reflectivity spectra of a strained pseudomorphic ZnTe epilayer on InAs under pressure
Author: Thomas, Robert J. (Robert James), 1967-; Boley, Mark S. (Mark Seymour), 1967-; Chandrasekhar, Meera; Chandrasekhar, Holalkere R.
Keywords: semiconductors
II-VI semiconductors
Date: 1994-01-15
Publisher: American Physical Society
Citation: Phys. Rev. B 49, 2181-2184 (1994)
Abstract: The piezomodulated-, electromodulated-, and photomodulated-reflectivity spectra of a pseudomorphic ZnTe epilayer, grown on an InAs epilayer by molecular-beam epitaxy, exhibit heavy- and light-hole excitonic signatures split by the lattice mismatch induced biaxial compressive strain. This splitting in the pseudomorphic epilayer is studied as a function of applied hydrostatic pressure using photomodulated reflectance spectroscopy at 80 K. With increasing hydrostatic compression, the compressive strain is progressively compensated by the pressure-induced tensile strain. At ∼55 kbars the epilayer becomes strain-free, and is under a biaxial tension at higher pressures. The separation between the heavy- and light-hole signatures is superlinear in pressure, suggestive of a strain or volume deformation-dependent shear deformation-potential constant. We also compare the pressure dependence of the Raman LO phonon of the ZnTe epilayer on InAs with that of a bulk ZnTe sample at 13 K. The pressure-dependent strain is found to be linear. Accurate values of the first-order strain derivatives of the LO phonons and mode Grüneisen constants are obtained.
URI: http://hdl.handle.net/10355/8162
ISSN: 1098-0121

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