[-] Show simple item record

dc.contributor.authorRoach, W. Patrickeng
dc.contributor.authorChandrasekhar, Meeraeng
dc.contributor.authorChandrasekhar, Holalkere R.eng
dc.contributor.authorChambers, F. A.eng
dc.date.issued1991eng
dc.descriptionURL:http://link.aps.org/doi/10.1103/PhysRevB.44.13404 DOI:10.1103/PhysRevB.44.13404eng
dc.description.abstractWe present a study of the radiative transitions in Al0.3Ga0.7As under hydrostatic pressure in the range 0-70 kbar using photoluminescence at 15 to 125 K. A new trapping center is reported. The center forms an efficient carrier trap, and produces a pressure-induced hysteresis in the intensity of the radiative transitions. A generic large-lattice-relaxation model with an unusually large emission barrier is proposed to understand the strong hysteresis. We postulate that the center is higher than the X conduction band at ambient pressures, and present arguments to show that it is indeed a different center, not caused by either the DX or the shallow-donor centers. We have also obtained pressure coefficients of several direct and indirect transitions. The activation energies of various radiative transitions and an understanding of the scattering processes at chosen pressures is obtained from the temperature dependence of the luminescence intensities.eng
dc.description.sponsorshipThis work was supported by the U.S. Army Research Office under Grant No. DAAL03-86-K0083, the U.S. Department of Energy under Grant No. DE-FG02-84ER45402, and the University of Missouri Research Council.eng
dc.identifier.citationPhys. Rev. B 44, 13404-13417 (1991)eng
dc.identifier.issn1098-0121eng
dc.identifier.urihttp://hdl.handle.net/10355/8165eng
dc.languageEnglisheng
dc.publisherAmerican Physical Societyeng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.sourceHarvested from: American Physical Societyeng
dc.subjectIII-V semiconductorseng
dc.subjectphotoacoustic effectseng
dc.subject.lcshOptoacoustic spectroscopyeng
dc.subject.lcshAcoustoopticseng
dc.subject.lcshSemiconductorseng
dc.titleElectronic transitions in bulk Al0.3Ga0.7As under hydrostatic pressureeng
dc.typeArticleeng


Files in this item

[PDF]

This item appears in the following Collection(s)

[-] Show simple item record