Pressure studies of impurity levels in AlxGa1-xAs
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The authors present a study of the deep and shallow donor levels under hydrostatic pressure. The shallow levels follow the conduction bands, while the deep levels are strongly sublinear with pressure. The temperature dependence of the intensities and energies is used to obtain an energy level diagram of the deep levels at high pressures.
W P Roach et al 1989 Semicond. Sci. Technol. 4 290