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    Pressure studies of impurity levels in AlxGa1-xAs

    Roach, W. Patrick
    Chandrasekhar, Meera
    Chandrasekhar, Holalkere R.
    Chambers, F. A.
    Meese, J. M.
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    [PDF] PressureStudiesImpurityLevels.pdf (331.6Kb)
    Date
    1989
    Format
    Article
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    Abstract
    The authors present a study of the deep and shallow donor levels under hydrostatic pressure. The shallow levels follow the conduction bands, while the deep levels are strongly sublinear with pressure. The temperature dependence of the intensities and energies is used to obtain an energy level diagram of the deep levels at high pressures.
    URI
    http://hdl.handle.net/10355/8170
    Citation
    W P Roach et al 1989 Semicond. Sci. Technol. 4 290
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    • Physics and Astronomy publications (MU)

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