Pressure studies of impurity levels in AlxGa1-xAs

dc.contributor.author	Roach, W. Patrick	eng
dc.contributor.author	Chandrasekhar, Meera	eng
dc.contributor.author	Chandrasekhar, Holalkere R.	eng
dc.contributor.author	Chambers, F. A.	eng
dc.contributor.author	Meese, J. M.	eng
dc.date.issued	1989	eng
dc.description	doi: 10.1088/0268-1242/4/4/033	eng
dc.description.abstract	The authors present a study of the deep and shallow donor levels under hydrostatic pressure. The shallow levels follow the conduction bands, while the deep levels are strongly sublinear with pressure. The temperature dependence of the intensities and energies is used to obtain an energy level diagram of the deep levels at high pressures.	eng
dc.description.sponsorship	This work was supported by theU S Army under grant number DAAL03-86K-0083, the US Department of Energy under grant number DE-AC02 84ER45048, and Amoco Corporation. M Chandrasekhar is a n A P Sloan Foundation Fellow.	eng
dc.identifier.citation	W P Roach et al 1989 Semicond. Sci. Technol. 4 290	eng
dc.identifier.issn	0268-1242	eng
dc.identifier.uri	http://hdl.handle.net/10355/8170	eng
dc.language	English	eng
dc.publisher	Institute of Physics	eng
dc.relation.ispartofcollection	University of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publications	eng
dc.source.harvested	Institute of Physics	eng
dc.subject.lcsh	Condensed matter	eng
dc.subject.lcsh	Semiconductors	eng
dc.title	Pressure studies of impurity levels in AlxGa1-xAs	eng
dc.type	Article	eng

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