High-pressure studies of GaAs-AlxGa1-xAs quantum wells at 300 and 80 K using photoreflectance spectroscopy
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A detailed photoreflectance study of a GaAs-Al0.3Ga0.7As multiple quantum well of well width 260 Å is carried out at 300 and 80 K. The pressure dependence of a large number of quantized states is observed. The sublinearity of pressure dependence increases with increasing quantum number. A model calculation that includes the pressure dependence of electron effective mass accurately describes the data. Transitions associated with L and X band extrema are observed and their pressure coefficients deduced.
Phys. Rev. B 38, 9790-9796 (1988)