High-pressure studies of GaAs-AlxGa1-xAs quantum wells at 300 and 80 K using photoreflectance spectroscopy

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High-pressure studies of GaAs-AlxGa1-xAs quantum wells at 300 and 80 K using photoreflectance spectroscopy

Please use this identifier to cite or link to this item: http://hdl.handle.net/10355/8171

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Title: High-pressure studies of GaAs-AlxGa1-xAs quantum wells at 300 and 80 K using photoreflectance spectroscopy
Author: Kangarlu, Allahyar, 1956-; Chandrasekhar, Holalkere R.; Chandrasekhar, Meera; Kapoor, Yogendra Mohan; Chambers, F. A.; Vojak, B. A.; Meese, J. M.
Keywords: III-V semiconductors
piezo-, elasto-, and acoustooptical effects
Date: 1988-11-15
Publisher: American Physical Society
Citation: Phys. Rev. B 38, 9790-9796 (1988)
Abstract: A detailed photoreflectance study of a GaAs-Al0.3Ga0.7As multiple quantum well of well width 260 Å is carried out at 300 and 80 K. The pressure dependence of a large number of quantized states is observed. The sublinearity of pressure dependence increases with increasing quantum number. A model calculation that includes the pressure dependence of electron effective mass accurately describes the data. Transitions associated with L and X band extrema are observed and their pressure coefficients deduced.
URI: http://hdl.handle.net/10355/8171
ISSN: 1098-0121

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