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dc.contributor.authorKangarlu, Allahyar, 1956-
dc.contributor.authorChandrasekhar, Holalkere R.
dc.contributor.authorChandrasekhar, Meera
dc.contributor.authorKapoor, Yogendra Mohan
dc.contributor.authorChambers, F. A.
dc.contributor.authorVojak, B. A.
dc.contributor.authorMeese, J. M.
dc.date.issued1988-11eng
dc.descriptionURL:http://link.aps.org/doi/10.1103/PhysRevB.38.9790 DOI:10.1103/PhysRevB.38.9790en
dc.description.abstractA detailed photoreflectance study of a GaAs-Al0.3Ga0.7As multiple quantum well of well width 260 Å is carried out at 300 and 80 K. The pressure dependence of a large number of quantized states is observed. The sublinearity of pressure dependence increases with increasing quantum number. A model calculation that includes the pressure dependence of electron effective mass accurately describes the data. Transitions associated with L and X band extrema are observed and their pressure coefficients deduced.en
dc.description.sponsorshipThis work was supported by the U.S. Department of Energy under Contract No. DE-AC02-84ER45048 and by the U.S. Army under Contract No. DAAL03-86-K0083.en
dc.identifier.citationPhys. Rev. B 38, 9790-9796 (1988)en
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/10355/8171
dc.publisherAmerican Physical Societyen
dc.relation.ispartofPhysics and Astronomy publicationsen
dc.relation.ispartofcommunityUniversity of Missouri-Columbia. College of Arts and Sciences. Department of Physics and Astronomy
dc.source.harvestedAmerican Physical Societyen
dc.subjectIII-V semiconductorsen
dc.subjectpiezo-, elasto-, and acoustooptical effectsen
dc.subject.lcshSemiconductorsen
dc.subject.lcshAcoustoopticsen
dc.titleHigh-pressure studies of GaAs-AlxGa1-xAs quantum wells at 300 and 80 K using photoreflectance spectroscopyen
dc.typeArticleen


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