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High-pressure studies of GaAs-AlxGa1-xAs quantum wells at 300 and 80 K using photoreflectance spectroscopy

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http://hdl.handle.net/10355/8171
dc.contributor.authorKangarlu, Allahyar, 1956-eng
dc.contributor.authorChandrasekhar, Holalkere R.eng
dc.contributor.authorChandrasekhar, Meeraeng
dc.contributor.authorKapoor, Yogendra Mohaneng
dc.contributor.authorChambers, F. A.eng
dc.contributor.authorVojak, B. A.eng
dc.contributor.authorMeese, J. M.eng
dc.date.issued1988eng
dc.descriptionURL:http://link.aps.org/doi/10.1103/PhysRevB.38.9790 DOI:10.1103/PhysRevB.38.9790eng
dc.description.abstractA detailed photoreflectance study of a GaAs-Al0.3Ga0.7As multiple quantum well of well width 260 Å is carried out at 300 and 80 K. The pressure dependence of a large number of quantized states is observed. The sublinearity of pressure dependence increases with increasing quantum number. A model calculation that includes the pressure dependence of electron effective mass accurately describes the data. Transitions associated with L and X band extrema are observed and their pressure coefficients deduced.eng
dc.description.sponsorshipThis work was supported by the U.S. Department of Energy under Contract No. DE-AC02-84ER45048 and by the U.S. Army under Contract No. DAAL03-86-K0083.eng
dc.identifier.citationPhys. Rev. B 38, 9790-9796 (1988)eng
dc.identifier.issn1098-0121eng
dc.identifier.urihttp://hdl.handle.net/10355/8171eng
dc.languageEnglisheng
dc.publisherAmerican Physical Societyeng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.sourceHarvested from: American Physical Societyeng
dc.subjectIII-V semiconductorseng
dc.subjectpiezo-, elasto-, and acoustooptical effectseng
dc.subject.lcshSemiconductorseng
dc.subject.lcshAcoustoopticseng
dc.titleHigh-pressure studies of GaAs-AlxGa1-xAs quantum wells at 300 and 80 K using photoreflectance spectroscopyeng
dc.typeArticleeng


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