Temperature dependence of the quantized states in a GaAs-Ga1-xAlxAs superlattice

Abstract

A detailed study of the photoreflectance spectra of a GaAs-Al0.3Ga0.7As superlattice as a function of temperature has revealed the temperature coefficients of the quantum- well transitions associated with the direct Γ conduction band (CB) of GaAs and the staggered transitions from the X-CB of AlxGa1-xAs to the valence band of GaAs. The data have been fitted to Varshni's equation. We have also observed the evolution of the excitonic transitions, especially for lower quantized states, as the temperature is decreased yielding the binding energies.