High-pressure studies of GaAs-Ga1-xAlxAs quantum wells of widths 26 to 150 Å

MOspace/Manakin Repository

Breadcrumbs Navigation

High-pressure studies of GaAs-Ga1-xAlxAs quantum wells of widths 26 to 150 Å

Please use this identifier to cite or link to this item: http://hdl.handle.net/10355/8181

[+] show full item record


Title: High-pressure studies of GaAs-Ga1-xAlxAs quantum wells of widths 26 to 150 Å
Author: Venkateswaran, Uma Devi; Chandrasekhar, Meera; Chandrasekhar, Holalkere R.; Vojak, B. A.; Chambers, F. A.; Meese, J. M.
Keywords: photoacoustic effects
piezo-, elasto-, and acoustooptical effects
Date: 1986-06-15
Publisher: American Physical Society
Citation: Phys. Rev. B 33, 8416-8423 (1986)
Abstract: Photoluminescence spectra of GaAs quantum wells of widths 26 to 150 Å are studied as a function of hydrostatic pressure (0-70 kbar) at 80 and 150 K. The pressure coefficients of both the heavy- and light-hole excitons are found to decrease with decreasing well width. The direct to indirect conduction-band crossover, leading to the formation of type-II heterostructures, occurs at higher pressures for wider wells. A transition associated with the X conduction band in quantum-well structures is observed and its pressure dependence is established. Correlating this transition to barrier-to-well recombination determines the valence-band offset.
URI: http://hdl.handle.net/10355/8181
ISSN: 1098-0121

This item appears in the following Collection(s)

[+] show full item record