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    High-pressure studies of GaAs-Ga1-xAlxAs quantum wells of widths 26 to 150 Å

    Venkateswaran, Uma Devi
    Chandrasekhar, Meera
    Chandrasekhar, Holalkere R.
    Vojak, B. A.
    Chambers, F. A.
    Meese, J. M.
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    [PDF] HighPressureStudiesGaAsGa.pdf (1.369Mb)
    Date
    1986
    Format
    Article
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    Abstract
    Photoluminescence spectra of GaAs quantum wells of widths 26 to 150 Å are studied as a function of hydrostatic pressure (0-70 kbar) at 80 and 150 K. The pressure coefficients of both the heavy- and light-hole excitons are found to decrease with decreasing well width. The direct to indirect conduction-band crossover, leading to the formation of type-II heterostructures, occurs at higher pressures for wider wells. A transition associated with the X conduction band in quantum-well structures is observed and its pressure dependence is established. Correlating this transition to barrier-to-well recombination determines the valence-band offset.
    URI
    http://hdl.handle.net/10355/8181
    Citation
    Phys. Rev. B 33, 8416-8423 (1986)
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    • Physics and Astronomy publications (MU)

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