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dc.contributor.authorVenkateswaran, Uma Devieng
dc.contributor.authorChandrasekhar, Meeraeng
dc.contributor.authorChandrasekhar, Holalkere R.eng
dc.contributor.authorVojak, B. A.eng
dc.contributor.authorChambers, F. A.eng
dc.contributor.authorMeese, J. M.eng
dc.date.issued1986eng
dc.descriptionURL:http://link.aps.org/doi/10.1103/PhysRevB.33.8416 ; DOI:10.1103/PhysRevB.33.8416eng
dc.description.abstractPhotoluminescence spectra of GaAs quantum wells of widths 26 to 150 Å are studied as a function of hydrostatic pressure (0-70 kbar) at 80 and 150 K. The pressure coefficients of both the heavy- and light-hole excitons are found to decrease with decreasing well width. The direct to indirect conduction-band crossover, leading to the formation of type-II heterostructures, occurs at higher pressures for wider wells. A transition associated with the X conduction band in quantum-well structures is observed and its pressure dependence is established. Correlating this transition to barrier-to-well recombination determines the valence-band offset.eng
dc.description.sponsorshipThe work at the University of Missouri was supported by Amoco Corporation and the Research Corporation (New York, NY). M.C. also thanks the Alfred P. Sloan Foundation for support.eng
dc.identifier.citationPhys. Rev. B 33, 8416-8423 (1986)eng
dc.identifier.issn1098-0121eng
dc.identifier.urihttp://hdl.handle.net/10355/8181
dc.languageEnglisheng
dc.publisherAmerican Physical Societyeng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.subjectphotoacoustic effectseng
dc.subjectpiezo-, elasto-, and acoustooptical effectseng
dc.subject.lcshOptoacoustic spectroscopyeng
dc.titleHigh-pressure studies of GaAs-Ga1-xAlxAs quantum wells of widths 26 to 150 Åeng
dc.typeArticleeng


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