Sub-2 nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile Memory
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The charge-storage characteristics of a metal-oxide-semiconductor (MOS) structure containing size-tunable sub-2 nm Pt nanoparticles (NPs) between Al2O3 tunneling and capping oxide layers were studied. Significantly different amounts of memory window were obtained with the different sizes of Pt NP embedded MOS structures and reached a maximum of 4.3 V using a 1.14 nm Pt NP, which has the strongest charging capability caused by optimum size and the largest particle density obtained in our deposition method. Satisfactory long-term nonvolatility was attained in a low electric field due to the Coulomb blockade and quantum confinement effects in ~ 1 nm Pt NP. These properties are very promising in view of device application.
IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 12, DECEMBER 2009 1362-1364