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dc.contributor.authorYun, Minseong, 1978-eng
dc.contributor.authorMueller, David W.eng
dc.contributor.authorHossain, Marufeng
dc.contributor.authorMisra, Veenaeng
dc.contributor.authorGangopadhyay, Shubhraeng
dc.date.issued2009-12eng
dc.descriptionDOI: 10.1109/LED.2009.2033618eng
dc.description.abstractThe charge-storage characteristics of a metal-oxide-semiconductor (MOS) structure containing size-tunable sub-2 nm Pt nanoparticles (NPs) between Al2O3 tunneling and capping oxide layers were studied. Significantly different amounts of memory window were obtained with the different sizes of Pt NP embedded MOS structures and reached a maximum of 4.3 V using a 1.14 nm Pt NP, which has the strongest charging capability caused by optimum size and the largest particle density obtained in our deposition method. Satisfactory long-term nonvolatility was attained in a low electric field due to the Coulomb blockade and quantum confinement effects in ~ 1 nm Pt NP. These properties are very promising in view of device application.eng
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 12, DECEMBER 2009 1362-1364eng
dc.identifier.issn0741-3106eng
dc.identifier.urihttp://hdl.handle.net/10355/8192eng
dc.languageEnglisheng
dc.publisherInstitute of Electrical and Electronics Engineerseng
dc.relation.ispartofElectrical and Computer Engineering publications (MU)eng
dc.relation.ispartofcommunityUniversity of Missouri-Columbia. College of Engineering. Department of Electrical and Computer Engineeringeng
dc.rightsOpenAccess.eng
dc.rights.licenseThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.eng
dc.subjectCoulomb blockadeeng
dc.subjectelemental semiconductorseng
dc.subjectnanoeletctronicseng
dc.subjectnanoparticleseng
dc.subjectnonvolatile memoryeng
dc.subjecttunnellingeng
dc.subject.lcshSemiconductor nanoparticleseng
dc.subject.lcshSemiconductor storage deviceseng
dc.titleSub-2 nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile Memoryeng
dc.typeArticleeng


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