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    Crystallization of amorphous silicon by self-propagation of nanoengineered thermites

    Hossain, Maruf
    Subramanian, Senthil
    Bhattacharya, Shantanu, 1974-
    Gao, Yuanfang
    Apperson, Steven J., 1982-
    Shende, Rajesh
    Guha, Suchi
    Arif, Mohammad, 1974-
    Bai, Mengjun
    Gangopadhyay, Keshab
    Gangopadhyay, Shubhra
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    [PDF] CrystallizationAmorphousSiliconSelfPropagation.pdf (541.8Kb)
    Date
    2007
    Format
    Article
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    Abstract
    Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250 °C by plasma enhanced chemical vapor deposition. The platinum heater was patterned on the edge of the substrate and the CuO/Al nanoengineered thermite was spin coated on the substrate that connects the heater and the a-Si film. A voltage source was used to ignite the thermites followed by a piranha solution (4:1 of H2SO4:H2O2) etch for the removal of residual products of thermite reaction. Raman spectroscopy was used to confirm the crystallization of a-Si.
    URI
    http://hdl.handle.net/10355/8200
    Citation
    J. Appl. Phys. 101, 054509 (2007)
    Rights
    OpenAccess.
    This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.
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    • Biological Engineering publications (MU)
    • Physics and Astronomy publications (MU)
    • Electrical Engineering and Computer Science publications (MU)

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