Crystallization of amorphous silicon by self-propagation of nanoengineered thermites

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Please use this identifier to cite or link to this item: http://hdl.handle.net/10355/8200

Title:	Crystallization of amorphous silicon by self-propagation of nanoengineered thermites
Author:	Hossain, Maruf; Subramanian, Senthil; Bhattacharya, Shantanu, 1974-; Gao, Yuanfang; Apperson, Steven J., 1982-; Shende, Rajesh; Guha, Suchi; Arif, Mohammad, 1974-; Bai, Mengjun; Gangopadhyay, Keshab; Gangopadhyay, Shubhra
Keywords:	solid-solid transitions plasma OVD coatings
Date:	2007-03-07
Publisher:	American Institute of Physics
Citation:	J. Appl. Phys. 101, 054509 (2007)
Abstract:	Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250 °C by plasma enhanced chemical vapor deposition. The platinum heater was patterned on the edge of the substrate and the CuO/Al nanoengineered thermite was spin coated on the substrate that connects the heater and the a-Si film. A voltage source was used to ignite the thermites followed by a piranha solution (4:1 of H2SO4:H2O2) etch for the removal of residual products of thermite reaction. Raman spectroscopy was used to confirm the crystallization of a-Si.
URI:	http://hdl.handle.net/10355/8200
ISSN:	0021-8979

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