Crystallization of amorphous silicon by self-propagation of nanoengineered thermites

MOspace/Manakin Repository

Breadcrumbs Navigation

Crystallization of amorphous silicon by self-propagation of nanoengineered thermites

Please use this identifier to cite or link to this item: http://hdl.handle.net/10355/8200

[+] show full item record


Title: Crystallization of amorphous silicon by self-propagation of nanoengineered thermites
Author: Hossain, Maruf; Subramanian, Senthil; Bhattacharya, Shantanu, 1974-; Gao, Yuanfang; Apperson, Steven J., 1982-; Shende, Rajesh; Guha, Suchi; Arif, Mohammad, 1974-; Bai, Mengjun; Gangopadhyay, Keshab; Gangopadhyay, Shubhra
Keywords: solid-solid transitions
plasma OVD coatings
Date: 2007-03-07
Publisher: American Institute of Physics
Citation: J. Appl. Phys. 101, 054509 (2007)
Abstract: Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250 °C by plasma enhanced chemical vapor deposition. The platinum heater was patterned on the edge of the substrate and the CuO/Al nanoengineered thermite was spin coated on the substrate that connects the heater and the a-Si film. A voltage source was used to ignite the thermites followed by a piranha solution (4:1 of H2SO4:H2O2) etch for the removal of residual products of thermite reaction. Raman spectroscopy was used to confirm the crystallization of a-Si.
URI: http://hdl.handle.net/10355/8200
ISSN: 0021-8979

This item appears in the following Collection(s)

[+] show full item record