dc.contributor.author | Hossain, Maruf | eng |
dc.contributor.author | Subramanian, Senthil | eng |
dc.contributor.author | Bhattacharya, Shantanu, 1974- | eng |
dc.contributor.author | Gao, Yuanfang | eng |
dc.contributor.author | Apperson, Steven J., 1982- | eng |
dc.contributor.author | Shende, Rajesh | eng |
dc.contributor.author | Guha, Suchi | eng |
dc.contributor.author | Arif, Mohammad, 1974- | eng |
dc.contributor.author | Bai, Mengjun | eng |
dc.contributor.author | Gangopadhyay, Keshab | eng |
dc.contributor.author | Gangopadhyay, Shubhra | eng |
dc.date.issued | 2007 | eng |
dc.description | doi:10.1063/1.2450672 | eng |
dc.description.abstract | Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250 °C by plasma enhanced chemical vapor deposition. The platinum heater was patterned on the edge of the substrate and the CuO/Al nanoengineered thermite was spin coated on the substrate that connects the heater and the a-Si film. A voltage source was used to ignite the thermites followed by a piranha solution (4:1 of H2SO4:H2O2) etch for the removal of residual products of thermite reaction. Raman spectroscopy was used to confirm the crystallization of a-Si. | eng |
dc.description.sponsorship | The authors acknowledge Dr. Hameed A. Naseem, Professor of the University of Arkansas, for providing the a-Si samples. The authors also acknowledge the NSF NIRT
(Grant No. 1316-1898-01) for funding this project. | eng |
dc.identifier.citation | J. Appl. Phys. 101, 054509 (2007) | eng |
dc.identifier.issn | 0021-8979 | eng |
dc.identifier.uri | http://hdl.handle.net/10355/8200 | eng |
dc.language | English | eng |
dc.publisher | American Institute of Physics | eng |
dc.relation.ispartofcollection | Electrical and Computer Engineering publications (MU) | eng |
dc.relation.ispartofcommunity | University of Missouri-Columbia. College of Engineering. Department of Electrical and Computer Engineering | eng |
dc.rights | OpenAccess. | eng |
dc.rights.license | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License. | |
dc.subject | solid-solid transitions | eng |
dc.subject | plasma OVD coatings | eng |
dc.subject.lcsh | Silicon | eng |
dc.subject.lcsh | Semiconductor films | eng |
dc.subject.lcsh | Semiconductors | eng |
dc.subject.lcsh | Thin films | eng |
dc.title | Crystallization of amorphous silicon by self-propagation of nanoengineered thermites | eng |
dc.type | Article | eng |