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dc.contributor.authorOthman, Maslin, 1977-eng
dc.contributor.authorLubguban, J. A.eng
dc.contributor.authorLubguban, Arnold A.eng
dc.contributor.authorGangopadhyay, Shubhraeng
dc.contributor.authorMiller, R. D.eng
dc.contributor.authorVolksen, W.eng
dc.contributor.authorKim, H.-C.eng
dc.date.issued2006eng
dc.descriptiondoi:10.1063/1.2189018eng
dc.description.abstractVariable angle spectroscopic ellipsometry (VASE™) is used as a tool to characterize properties such as optical constant, thickness, refractive index depth profile, and pore volume fraction of single and bilayer porous low-k films. The porous films were prepared using sacrificial pore generator (porogen) approach. Two sets of porous films with open- and closed-pore geometries were measured. Three models were used for data analysis: Cauchy, Bruggeman effective medium approximation (BEMA), and graded layer. Cauchy, a well-known model for transparent films, was used to obtain thickness and optical constant, whereas BEMA was utilized to calculate the pore volume fraction from the ellipsometric data. The Cauchy or BEMA models were then modified as graded layers, resulting in a better fit and a better understanding of the porous film. The depth profile of the porous film implied a more porous layer at the substrate-film interface. We found 3%-4% more porosity at the interface compared with the bulk for both films. This work shows that VASE™, a nondestructive measurement tool, can be used to characterize single- and multigraded layer porous films quickly and effectively.eng
dc.description.sponsorshipThe authors would like to acknowledge the financial support of Semiconductor Research Corporation (SRC).eng
dc.identifier.citationJ. Appl. Phys. 99, 083503 (2006)eng
dc.identifier.issn0021-8979eng
dc.identifier.urihttp://hdl.handle.net/10355/8203eng
dc.languageEnglisheng
dc.publisherAmerican Institute of Physicseng
dc.relation.ispartofElectrical and Computer Engineering publicationseng
dc.relation.ispartofcollectionUniversity of Missouri-Columbia. College of Engineering. Department of Electrical and Computer Engineeringeng
dc.rightsOpenAccess.eng
dc.rights.licenseThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.
dc.subject.lcshPorous materialseng
dc.subject.lcshDielectric filmseng
dc.subject.lcshEllipsometryeng
dc.subject.lcshOptical constantseng
dc.subject.lcshRefractive indexeng
dc.subject.lcshPorosityeng
dc.titleCharacterization of porous low-k films using variable angle spectroscopic ellipsometryeng
dc.typeArticleeng


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