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dc.contributor.authorChoi, K.eng
dc.contributor.authorTemkin, H.eng
dc.contributor.authorHarris, H.eng
dc.contributor.authorGangopadhyay, Shubhraeng
dc.contributor.authorXie, L.eng
dc.contributor.authorWhite, Marvineng
dc.date.issued2004eng
dc.descriptiondoi:10.1063/1.1771457eng
dc.description.abstractInterfacial chemistry of Hf∕Si, HfO2∕SiO2∕Si, and HfO2∕Si is investigated by x-ray photoelectron spectroscopy in order to understand the interfacial layer formation mechanism. Deposition of Hf and HfO2 films was carried out on Si wafers by electron-beam evaporation with oxygen backfill. We show that the interfacial layer formation takes place predominantly at the initial stage of the HfO2 film deposition. Temporary direct bonding between Hf metal and Si is proposed to be the source of the catalytic reaction resulting in formation of interfacial layer. Formation of interfacial layer was suppressed by chemically grown thin oxide blocking the direct Si-Hf bonding. We also demonstrate reduced interfacial layer after modified Shiraki surface etch, compared to the Radio Corporation of America clean. This indicates that a more complete hydrogen termination and atomically smoother surface can delay the onset of interfacial layer formation.eng
dc.identifier.citationAppl. Phys. Lett. 85, 215 (2004)eng
dc.identifier.issn0003-6951eng
dc.identifier.urihttp://hdl.handle.net/10355/8204eng
dc.languageEnglisheng
dc.publisherAmerican Institute of Physicseng
dc.relation.ispartofElectrical and Computer Engineering publicationseng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Engineering. Department of Electrical and Computer Engineeringeng
dc.rightsOpenAccess.eng
dc.rights.licenseThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.
dc.subjectsurface cleaning, etching, patterningeng
dc.subjectelectron beam depositioneng
dc.subject.lcshSurface chemistryeng
dc.subject.lcshThin filmseng
dc.titleInitial growth of interfacial oxide during deposition of HfO2 on siliconeng
dc.typeArticleeng


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