Electric field and temperature-induced removal of moisture in nanoporous organosilicate films

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Electric field and temperature-induced removal of moisture in nanoporous organosilicate films

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Title: Electric field and temperature-induced removal of moisture in nanoporous organosilicate films
Author: Biswas, N.; Lubguban, J. A.; Gangopadhyay, Shubhra
Keywords: nanoscale materials
adsorption kinetics
nanoporous materials
high-temperature effects
Date: 2004-05-07
Publisher: American Institute of Physics
Citation: Appl. Phys. Lett. 84, 4254 (2004)
Abstract: The effects of bias-temperature-stress (BTS) or simply temperature-stress (TS) on nanoporous low-k methylsilsesquioxane films are studied. Initially, the as-given and O2 ashed/etched films exhibit physical adsorption of moisture as revealed from the electrical behavior of the samples after 15 days. The temperature stressing at 170 °C volatilized the adsorbed water but is unable to remove chemisorb and hydrophillic Si-OH groups. As a result, the TS films remain susceptible to moisture. BTS at 170 °C also removes adsorbed water. More important, the surfaces under the metal-insulator structure were dehydroxylated by breaking the chemisorb Si-OH group facilitating the formation of siloxane bonds that prevents adsorption of moisture even after 60 days.
URI: http://hdl.handle.net/10355/8205
ISSN: 0003-6951

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