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dc.contributor.authorBiswas, N.eng
dc.contributor.authorLubguban, J. A.eng
dc.contributor.authorGangopadhyay, Shubhraeng
dc.date.issued2004-05eng
dc.descriptiondoi:10.1063/1.1757019eng
dc.description.abstractThe effects of bias-temperature-stress (BTS) or simply temperature-stress (TS) on nanoporous low-k methylsilsesquioxane films are studied. Initially, the as-given and O2 ashed/etched films exhibit physical adsorption of moisture as revealed from the electrical behavior of the samples after 15 days. The temperature stressing at 170 °C volatilized the adsorbed water but is unable to remove chemisorb and hydrophillic Si-OH groups. As a result, the TS films remain susceptible to moisture. BTS at 170 °C also removes adsorbed water. More important, the surfaces under the metal-insulator structure were dehydroxylated by breaking the chemisorb Si-OH group facilitating the formation of siloxane bonds that prevents adsorption of moisture even after 60 days.eng
dc.description.sponsorshipThe authors would like to acknowledge Dorel Toma of TEL for providing the samples, and SRC and NSF for funding this research.eng
dc.identifier.citationAppl. Phys. Lett. 84, 4254 (2004)eng
dc.identifier.issn0003-6951eng
dc.identifier.urihttp://hdl.handle.net/10355/8205eng
dc.publisherAmerican Institute of Physicseng
dc.relation.ispartofElectrical and Computer Engineering publicationseng
dc.relation.ispartofcommunityUniversity of Missouri-Columbia. College of Engineering. Department of Electrical and Computer Engineeringeng
dc.subjectnanoscale materialseng
dc.subjectadsorption kineticseng
dc.subjectnanoporous materialseng
dc.subjecthigh-temperature effectseng
dc.subject.lcshThin filmseng
dc.subject.lcshPorous materialseng
dc.titleElectric field and temperature-induced removal of moisture in nanoporous organosilicate filmseng
dc.typeArticleeng


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