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dc.contributor.authorBiswas, N.
dc.contributor.authorLubguban, J. A.
dc.contributor.authorGangopadhyay, Shubhra
dc.date.issued2004-05eng
dc.descriptiondoi:10.1063/1.1757019en
dc.description.abstractThe effects of bias-temperature-stress (BTS) or simply temperature-stress (TS) on nanoporous low-k methylsilsesquioxane films are studied. Initially, the as-given and O2 ashed/etched films exhibit physical adsorption of moisture as revealed from the electrical behavior of the samples after 15 days. The temperature stressing at 170 °C volatilized the adsorbed water but is unable to remove chemisorb and hydrophillic Si-OH groups. As a result, the TS films remain susceptible to moisture. BTS at 170 °C also removes adsorbed water. More important, the surfaces under the metal-insulator structure were dehydroxylated by breaking the chemisorb Si-OH group facilitating the formation of siloxane bonds that prevents adsorption of moisture even after 60 days.en
dc.description.sponsorshipThe authors would like to acknowledge Dorel Toma of TEL for providing the samples, and SRC and NSF for funding this research.en
dc.identifier.citationAppl. Phys. Lett. 84, 4254 (2004)en
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10355/8205
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofElectrical and Computer Engineering publicationsen
dc.relation.ispartofcommunityUniversity of Missouri-Columbia. College of Engineering. Department of Electrical and Computer Engineering
dc.subjectnanoscale materialsen
dc.subjectadsorption kineticsen
dc.subjectnanoporous materialsen
dc.subjecthigh-temperature effectsen
dc.subject.lcshThin filmsen_US
dc.subject.lcshPorous materialsen_US
dc.titleElectric field and temperature-induced removal of moisture in nanoporous organosilicate filmsen
dc.typeArticleen


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