dc.contributor.author | Milewits, M. | eng |
dc.contributor.author | Williamson, S. J. | eng |
dc.contributor.author | Taub, Haskell | eng |
dc.date.issued | 1976 | eng |
dc.description | URL:http://link.aps.org/doi/10.1103/PhysRevB.13.5199
DOI:10.1103/PhysRevB.13.5199 | eng |
dc.description.abstract | We report the results and interpretation of precision measurements of the electrical resistivity of V3Si in the temperature range Tc≤T≤77 K. Four samples of a wide range in residual resistance ratio (RRR) and with 15.1≤Tc≤16.8 K have been investigated. We find that the resistivity of all the samples is well described by a temperature dependence of the form ρ(T)=ρ0+bTn+dexp(-T0/T), where n falls within the range 1≤n≤2. The parameter d is sensitive to the RRR of the sample, whereas b and T0 are relatively insensitive. The characteristic temperature T0≈175 K is essentially independent of the choice of n within the stated range. A similar exponential term in ρ(T) of Nb3Sn with T0≈85 K has previously been identified by Woodard and Cody. Nothing that in both V3Si and Nb3Sn the value of T0 corresponds to the energy of [100] TA phonons near the zone boundary, we argue that the exponential term is due either to phonon-assisted interband scattering or intraband umklapp scattering. The reasons for the scattering effectiveness of this phonon will be discussed in light of recent band-structure calculations by Mattheiss and previous band models proposed to explain the anomalous normal-state properties of A-15 compounds. The nonexponential term in the resistivity is more difficult to characterize empirically and its origin is correspondingly more uncertain. We suggest it arises from intraband electron-electron scattering. The temperature dependence of the resistivity will be discussed with respect to anomalies observed in the low-temperature elastic constants, magnetic susceptibility, and specific heat of V3Si. | eng |
dc.description.sponsorship | Supported by the Army Research Office (Durham) under Grant DA-AROD-31-124-73-G158. | eng |
dc.identifier.citation | Phys. Rev. B 13, 5199-5210 (1976) | eng |
dc.identifier.issn | 1098-0121 | eng |
dc.identifier.uri | http://hdl.handle.net/10355/8856 | eng |
dc.language | English | eng |
dc.publisher | American Physical Society | eng |
dc.relation.ispartofcollection | University of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publications | eng |
dc.subject | residual resistance ratio | eng |
dc.subject.lcsh | Electric resistance -- Measurement | eng |
dc.title | Exponential temperature dependence of the electrical resistivity of V3Si | eng |
dc.type | Article | eng |