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dc.contributor.advisorGangopadhyay, Shubhraeng
dc.contributor.authorYun, Minseong, 1978-eng
dc.date.issued2009eng
dc.date.submitted2009 Falleng
dc.descriptionThe entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technica public abstract appears in the public.pdf file.eng
dc.descriptionTitle from PDF of title page (University of Missouri--Columbia, viewed on January 28, 2011).eng
dc.descriptionThesis advisor: Dr. Shubhra Gangopadhyay.eng
dc.descriptionVita.eng
dc.descriptionPh. D. University of Missouri--Columbia 2009.eng
dc.description.abstractOrganic field-effect transistors (FETs) have been widely investigated due to their potential applications in low cost, large area, and flexible electronics. Despite the rapid progress in organic FETs there are still obstacles such as high density of defect in organic semiconductor and poor interface between dielectric and organic semiconductor. In this dissertation, charge transport characteristics of ethyl-hexyl substituted polyfluorene (PF2/6) using hybrid metal-oxide-semiconductor (MOS) structures are presented. Capacitance and conductance-voltage measurements give insight into the presence of distribution of trap charges at the interface. In addition, by thermal annealing of PF2/6 film to a semicrystalline phase, the bulk and interface properties of PF2/6 are significantly improved. Charge storage characteristics of MOS structure containing size tunable sub-2 nm Pt nanoparticles between Al₂O₃ double layers were studied. Significantly different amounts of memory window were obtained due to the different size of Pt nanoparticles and reached a maximum of 4.3 V using 1.14 nm Pt nanoparticles. Satisfactory long term non-volatility was attained in a low electric field due to the Coulomb blockade and quantum confinement effects in [about]1 nm Pt nanoparticle. Further, our metal nanoparticle formation at room temperature can be integrated to polymer dielectric and semiconductor to produce polymer-based non-volatile memory.eng
dc.description.bibrefIncludes bibliographical referenceseng
dc.format.extentxii, 147 pageseng
dc.identifier.oclc698751454eng
dc.identifier.urihttps://hdl.handle.net/10355/9886
dc.identifier.urihttps://doi.org/10.32469/10355/9886eng
dc.languageEnglisheng
dc.publisherUniversity of Missouri--Columbiaeng
dc.relation.ispartofcommunityUniversity of Missouri--Columbia. Graduate School. Theses and Dissertationseng
dc.rightsOpenAccess.eng
dc.rights.licenseThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.
dc.subject.lcshOrganic field-effect transistorseng
dc.subject.lcshOrganic semiconductorseng
dc.subject.lcshMetal oxide semiconductor field-effect transistorseng
dc.subject.lcshMetal oxide semiconductorseng
dc.subject.lcshFerroelectric storage cellseng
dc.titleFabrication and characterization of polymer based metal-oxide-semiconductor and non-volatile memory deviceseng
dc.typeThesiseng
thesis.degree.disciplineElectrical and computer engineering (MU)eng
thesis.degree.grantorUniversity of Missouri--Columbiaeng
thesis.degree.levelDoctoraleng
thesis.degree.namePh. D.eng


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