Shared more. Cited more. Safe forever.
    • advanced search
    • submit works
    • about
    • help
    • contact us
    • login
    View Item 
    •   MOspace Home
    • University of Missouri-Columbia
    • College of Arts and Sciences (MU)
    • Department of Physics and Astronomy (MU)
    • Physics and Astronomy publications (MU)
    • View Item
    •   MOspace Home
    • University of Missouri-Columbia
    • College of Arts and Sciences (MU)
    • Department of Physics and Astronomy (MU)
    • Physics and Astronomy publications (MU)
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.
    advanced searchsubmit worksabouthelpcontact us

    Browse

    All of MOspaceCommunities & CollectionsDate IssuedAuthor/ContributorTitleIdentifierThesis DepartmentThesis AdvisorThesis SemesterThis CollectionDate IssuedAuthor/ContributorTitleIdentifierThesis DepartmentThesis AdvisorThesis Semester

    Statistics

    Most Popular ItemsStatistics by CountryMost Popular AuthorsStatistics by Referrer

    Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition

    Ryu, Yung-ryel, 1964-
    Zhu, S.
    Budai, J. D.
    Chandrasekhar, Holalkere R.
    Miceli, Paul F.
    White, H. W.
    View/Open
    [PDF] OpticalStructuralPropertiesZno.pdf (257.9Kb)
    Date
    2000
    Format
    Article
    Metadata
    [+] Show full item record
    Abstract
    ZnO films were synthesized on GaAs substrates at different growth conditions by pulse laser deposition. High-purity (99.999%) oxygen was used as the ambient gas. The pressure of the ambient oxygen gas for ZnO film growth was varied from 20 to 50 mTorr, and the growth temperature from 300 to 450 °C. ZnO films showed very strong bound exciton peaks located between 3.37 and 3.35 eV. The full width at half maximum of the bound exciton peak is less than 5 meV. These results indicate ZnO films on GaAs substrates can be used for optical devices such as light-emitting diodes. The other significant properties of textured ZnO films on GaAs substrates are described.
    URI
    http://hdl.handle.net/10355/7475
    Citation
    J. Appl. Phys. 88, 201 (2000)
    Collections
    • Physics and Astronomy publications (MU)

    Send Feedback
    hosted by University of Missouri Library Systems
     

     


    Send Feedback
    hosted by University of Missouri Library Systems