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Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

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http://hdl.handle.net/10355/8161
dc.contributor.authorThomas, Robert J. (Robert James), 1967-eng
dc.contributor.authorRockwell, Benjamin A.eng
dc.contributor.authorChandrasekhar, Holalkere R.eng
dc.contributor.authorChandrasekhar, Meeraeng
dc.contributor.authorRamdas, A. K.eng
dc.contributor.authorKobayashi, M.eng
dc.contributor.authorGunshor, R. L.eng
dc.date.issued1995eng
dc.descriptiondoi:10.1063/1.360477eng
dc.description.abstractA study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy‐ and light‐hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.eng
dc.description.sponsorshipThe work by H. R. C. was supported in part by the U. S. Department of Energy under Contract No. DE-FG02-89ER45402. M. C. acknowledges the support from the U.S. Army Research Office DAAL-03-92-G0381. A. K.. R. acknowledges support from the National Science Foundation (Materials Research Group No. DMR89-13706) and R. L. G. from AFOSR-89-0438; both A. K. R. and R. L. G. also acknowledge support from DARPA-URI Grant No. 218-25015. We thank Lok C. Lew Yan Voon and L. R. Ram-Mohan for many stimulating discussions.eng
dc.identifier.citationJ. Appl. Phys. 78, 6569 (1995)eng
dc.identifier.issn0021-8979eng
dc.identifier.urihttp://hdl.handle.net/10355/8161eng
dc.languageEnglisheng
dc.publisherAmerican Institute of Physicseng
dc.relation.ispartofcollectionUniversity of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publicationseng
dc.sourceHarvested from: American Institute of Physicseng
dc.subjectepitaxial layerseng
dc.subjectoptical reflectioneng
dc.subject.lcshEpitaxyeng
dc.subject.lcshModulation spectroscopyeng
dc.subject.lcshGallium arsenideeng
dc.subject.lcshExciton theoryeng
dc.titleTemperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)eng
dc.typeArticleeng


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