Shared more. Cited more. Safe forever.
    • advanced search
    • submit works
    • about
    • help
    • contact us
    • login
    View Item 
    •   MOspace Home
    • University of Missouri-Columbia
    • Graduate School - MU Theses and Dissertations (MU)
    • Theses and Dissertations (MU)
    • Dissertations (MU)
    • 2009 Dissertations (MU)
    • 2009 MU dissertations - Freely available online
    • View Item
    •   MOspace Home
    • University of Missouri-Columbia
    • Graduate School - MU Theses and Dissertations (MU)
    • Theses and Dissertations (MU)
    • Dissertations (MU)
    • 2009 Dissertations (MU)
    • 2009 MU dissertations - Freely available online
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.
    advanced searchsubmit worksabouthelpcontact us

    Browse

    All of MOspaceCommunities & CollectionsDate IssuedAuthor/ContributorTitleSubjectIdentifierThesis DepartmentThesis AdvisorThesis SemesterThis CollectionDate IssuedAuthor/ContributorTitleSubjectIdentifierThesis DepartmentThesis AdvisorThesis Semester

    Statistics

    Most Popular ItemsStatistics by CountryMost Popular AuthorsStatistics by Referrer

    Fabrication and characterization of polymer based metal-oxide-semiconductor and non-volatile memory devices

    Yun, Minseong, 1978-
    View/Open
    [PDF] public.pdf (2.308Kb)
    [PDF] short.pdf (11.52Kb)
    [PDF] research.pdf (2.473Mb)
    Date
    2009
    Format
    Thesis
    Metadata
    [+] Show full item record
    Abstract
    Organic field-effect transistors (FETs) have been widely investigated due to their potential applications in low cost, large area, and flexible electronics. Despite the rapid progress in organic FETs there are still obstacles such as high density of defect in organic semiconductor and poor interface between dielectric and organic semiconductor. In this dissertation, charge transport characteristics of ethyl-hexyl substituted polyfluorene (PF2/6) using hybrid metal-oxide-semiconductor (MOS) structures are presented. Capacitance and conductance-voltage measurements give insight into the presence of distribution of trap charges at the interface. In addition, by thermal annealing of PF2/6 film to a semicrystalline phase, the bulk and interface properties of PF2/6 are significantly improved. Charge storage characteristics of MOS structure containing size tunable sub-2 nm Pt nanoparticles between Al₂O₃ double layers were studied. Significantly different amounts of memory window were obtained due to the different size of Pt nanoparticles and reached a maximum of 4.3 V using 1.14 nm Pt nanoparticles. Satisfactory long term non-volatility was attained in a low electric field due to the Coulomb blockade and quantum confinement effects in [about]1 nm Pt nanoparticle. Further, our metal nanoparticle formation at room temperature can be integrated to polymer dielectric and semiconductor to produce polymer-based non-volatile memory.
    URI
    https://hdl.handle.net/10355/9886
    https://doi.org/10.32469/10355/9886
    Degree
    Ph. D.
    Thesis Department
    Electrical and computer engineering (MU)
    Rights
    OpenAccess.
    This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License.
    Collections
    • 2009 MU dissertations - Freely available online
    • Electrical Engineering and Computer Science electronic theses and dissertations (MU)

    Send Feedback
    hosted by University of Missouri Library Systems
     

     


    Send Feedback
    hosted by University of Missouri Library Systems