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Ultra Low Power SubThreshold Device Design Using New Ion Implantation Profile
(University of Missouri--Kansas City, 2016)
One of the important aspects of integrated circuit design is doping profile of a transistor
along its length, width and depth. Devices for super-threshold circuit usually employ halo and
retrograde doping profiles in ...
Investigation of Interconnect and Device Designs for Emerging Post-MOSFET and Beyond Silicon Technologies
(University of Missouri--Kansas City, 2016)
The integrated circuit industry has been pursuing Moore’s curve down to deep
nanoscale dimensions that would lead to the anticipated delivery of 100 billion transistors on
a 300 mm² die operating below 1V supply in the ...
Silicon on Ferroelectric Insulator Field Effect Transistor (SOFFET): A Radical Alternative to Overcome the Thermionic Limit
(University of Missouri--Kansas City, 2016)
The path of down-scaling traditional MOSFET is reaching its technological,
economic and, most importantly, fundamental physical limits. Before the dead-end of the
roadmap, it is imperative to conduct a broad research ...