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Novel Non Precharging Single Bitline 8T Static Random Access Memory
(University of Missouri--Kansas City, 2016)
Novel 8T SRAM design, employs individual bit-line (BL) and word-line (WL)
for each operation. The read operation uses read word-line (RWL) and read bit-line (RBL)
respectively. On other hand the write operation employs ...
Nanoscale Nonvolatile Memory Circuit Design using Emerging Spin Transfer Torque Magnetic Random Access Memory
(University of Missouri--Kansas City, 2016)
The spin transfer torque magnetic random access memory (STT-MRAM) is suitable for
embedded and second level cache memories in the mobile CPUs. STT-MRAM is a highly
potential nonvolatile memory (NVM) technology. There ...