Browsing College of Engineering (MU) by Title "Initial growth of interfacial oxide during deposition of HfO2 on silicon"
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Initial growth of interfacial oxide during deposition of HfO2 on silicon
(American Institute of Physics, 2004)Interfacial chemistry of Hf∕Si, HfO2∕SiO2∕Si, and HfO2∕Si is investigated by x-ray photoelectron spectroscopy in order to understand the interfacial layer formation mechanism. Deposition of Hf and HfO2 films was carried ...