dc.contributor.author | Satpathy, Sashi Sekhar, 1956- | eng |
dc.contributor.author | Chandrasekhar, Meera | eng |
dc.contributor.author | Chandrasekhar, Holalkere R. | eng |
dc.contributor.author | Venkateswaran, Uma Devi | eng |
dc.date.issued | 1991 | eng |
dc.description | URL:http://link.aps.org/doi/10.1103/PhysRevB.44.11339
DOI:10.1103/PhysRevB.44.11339 | eng |
dc.description.abstract | We show that the exciton photoluminescence line shape in the GaAs/AlxGa1-xAs quantum wells under pressure is broadened by hybridization of the Γ exciton with the X and the L continua via electron-phonon coupling. Furthermore, we demonstrate the pressure tuning of the resonance-broadening effect which can be used to extract the electron-phonon coupling parameters directly. For GaAs we estimate the intervalley electron-phonon deformation potential DΓX to be 10.7±0.7 eV/Å. The resonance effect should be observable in other semiconductors as well. | eng |
dc.description.sponsorship | S.S. thanks the Weldon-Spring Foundation of the University of Missouri for financial support. H.R.C. and M.C. thank the U.S. Department of Energy (Contract No. DE-FG-02-89ER 45402) and the U.S. Army (Contract No. DAAL 03-86-K-0083), respectively, for financial support. | eng |
dc.identifier.citation | Phys. Rev. B 44, 11339-11344 (1991) | eng |
dc.identifier.issn | 1098-0121 | eng |
dc.identifier.uri | http://hdl.handle.net/10355/8166 | eng |
dc.language | English | eng |
dc.publisher | American Physical Society | eng |
dc.relation.ispartofcollection | University of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publications | eng |
dc.source | Harvested from: American Physical Society | eng |
dc.subject | III-V semiconductors | eng |
dc.subject.lcsh | Semiconductors | eng |
dc.title | Pressure-induced resonance broadening of exciton line shapes in semiconductors: Direct determination of intervalley scattering rates in GaAs | eng |
dc.type | Article | eng |