Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities
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In III-V dilute magnetic semiconductors such as Ga1−xMnxAs, the impurity positions tend to be correlated, which can drastically affect the electronic transport properties of these materials. Within the memory function formalism we have derived a general expression for the current relaxation kernel in spin and charge disordered media and have calculated spin and charge scattering rates in the weak-disorder limit. Using a simple model for impurity clustering, we find a significant enhancement of the charge scattering. The enhancement is sensitive to cluster parameters and may be controllable through postgrowth annealing.
Phys. Rev. B 75, 045205 (2007)