dc.contributor.author | Kyrychenko, F. V. | eng |
dc.contributor.author | Ullrich, Carsten A. | eng |
dc.date.issued | 2007 | eng |
dc.description | URL:http://link.aps.org/doi/10.1103/PhysRevB.75.045205
DOI:10.1103/PhysRevB.75.045205 | eng |
dc.description.abstract | In III-V dilute magnetic semiconductors such as Ga1−xMnxAs, the impurity positions tend to be correlated, which can drastically affect the electronic transport properties of these materials. Within the memory function formalism we have derived a general expression for the current relaxation kernel in spin and charge disordered media and have calculated spin and charge scattering rates in the weak-disorder limit. Using a simple model for impurity clustering, we find a significant enhancement of the charge scattering. The enhancement is sensitive to cluster parameters and may be controllable through postgrowth annealing. | eng |
dc.description.sponsorship | This work was supported by DOE Grant No. DE-FG02-05ER46213. | eng |
dc.identifier.citation | Phys. Rev. B 75, 045205 (2007) | eng |
dc.identifier.issn | 1098-0121 | eng |
dc.identifier.uri | http://hdl.handle.net/10355/7603 | eng |
dc.language | English | eng |
dc.publisher | American Physical Society | eng |
dc.relation.ispartofcollection | University of Missouri--Columbia. College of Arts and Sciences. Department of Physics and Astronomy. Physics and Astronomy publications | eng |
dc.subject | III-V and II-VI semiconductors | eng |
dc.subject | disordered solids | eng |
dc.subject.lcsh | Order-disorder models | eng |
dc.subject.lcsh | Solids | eng |
dc.subject.lcsh | Semiconductors | eng |
dc.title | Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities | eng |
dc.type | Article | eng |